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Effect of annealing on the magnetic properties of Gd focused ion beam implanted GaN
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10.1063/1.2770762
/content/aip/journal/apl/91/7/10.1063/1.2770762
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/7/10.1063/1.2770762
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AFM surface images of the GaN samples (a) before (b) after the Gd implantation at the highest dose, and (c) after the annealing at for , (d) as a function of the annealing and implantation states for both the samples.

Image of FIG. 2.
FIG. 2.

X-ray diffraction symmetric scans taken on the reference sample (A-0) and sample A-3 before and after the annealing at for . The inset is schematically showing the distribution of the vacancies and interstitials in the implanted layer.

Image of FIG. 3.
FIG. 3.

Magnetization loops obtained at for (a) samples A-1 and (b) A-3 before and after the annealing at different temperatures. The inset of (a) shows the temperature dependence of the FC and ZFC magnetization measured at a magnetic field of for samples A-1 after the final step of annealing. The inset of (b) shows the magnetization loop at low fields obtained at for sample A-3 after the final annealing step before subtracting the substrate contribution.

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/content/aip/journal/apl/91/7/10.1063/1.2770762
2007-08-17
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of annealing on the magnetic properties of Gd focused ion beam implanted GaN
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/7/10.1063/1.2770762
10.1063/1.2770762
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