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Influence of crystallographic steps on properties of ferroelectric ultrathin films: An ab initio study
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10.1063/1.2770764
/content/aip/journal/apl/91/7/10.1063/1.2770764
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/7/10.1063/1.2770764
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Image of FIG. 1.
FIG. 1.

(Color online) Stripe domains in compressively strained PZT thin films. Panel (a) corresponds to simulations for a defect-free film of thickness at . Panels (b) and (c) report our numerical predictions for the and configurations in a film with a maximum thickness of and containing a step with a height of at its top (001) surface, respectively. Panels (d), (e), and (f) schematize the domain structures of panels (a), (b), and (c), respectively. Note that panel (f) displays two cross sections: one for the (010) plane located at the step [right side of panel (f)] and another one for the (010) plane located in the thinner part of the film just before the step [left side of panel (f)].

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/content/aip/journal/apl/91/7/10.1063/1.2770764
2007-08-13
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of crystallographic steps on properties of ferroelectric ultrathin films: An ab initio study
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/7/10.1063/1.2770764
10.1063/1.2770764
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