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Propagation and spatiotemporal summation of electrical pulses in semiconductor nerve fibers
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) (a) Semiconductor layer structure. Current loops thread the wire clamped by a voltage bias: (1) electron diffusion across the depletion layer, (2) longitudinal diffusion in the electrode and (3) capture by the electric field of the depletion layer. (b) Micrograph of the wide semiconductor axon with its dendrites (top left) and Ohmic contacts ( pads). A detail of the freestanding axon is shown on the right hand side. The thicknesses of the doped layers and the depletion region were as follows: junction 1: , , , and ; junction 2: , , , and . (c) Current-voltage characteristics of junctions J1 and J2.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Signal speed as a function of the amplitude of pulses applied by the voltage clamp: experimental (∎) and theoretical (lines). Inset: signal speed measured at different distances from the clamp. (b) Signal decay length as a function of : experimental (∎) and theoretical (lines). Inset: signal decay away from the voltage clamp.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Two pulse trains applied at contacts 6 and 8 interfere constructively at contact 7. Right panel: interferences modeled by solving the wire diffusion equation. (b) Destructive interferences obtained by applying pulses at contact 6 and pulses at contact 8. (c) Amplitude of constructive (+) and negative (−) interferences at contact 7 plotted as a function of . (1) is the reference output induced by one pulse train applied at 6 (or 8). Inset: amplitude of constructive interferences measured at intermediate locations along the wire when pulse trains and are applied to its extremities.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Propagation and spatiotemporal summation of electrical pulses in semiconductor nerve fibers