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Unipolarization of ambipolar organic field effect transistors toward high-impedance complementary metal-oxide-semiconductor circuits
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10.1063/1.2770963
/content/aip/journal/apl/91/7/10.1063/1.2770963
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/7/10.1063/1.2770963

Figures

Image of FIG. 1.
FIG. 1.

(a) Equivalent circuit of CMOS inverter, (b) measurement setup, and [(c) and (d)] other CMOS configurations compared.

Image of FIG. 2.
FIG. 2.

Output characteristics of OFETs consisting of (a) the composite of PHT:PCBM in 1:3, (b) the composite with TCNQ buffer layer, and (c) the composite with TTF buffer layer; and transfer characteristics of OFETs consisting of (d) the composite, (e) the composite with TCNQ buffer layer, and (f) the composite with TTF buffer layer.

Image of FIG. 3.
FIG. 3.

CMOS output (solid line) and through current (dashed line) as a function of input voltage consisting of (a) PHT and PCBM layers, (b) composite of PHT:PCBM, and (c) composite of PHT:PCBM with TCNQ or TTF layer insertion.

Tables

Generic image for table
Table I.

Semiconductor parameters of OFETs having various different channel layers.

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/content/aip/journal/apl/91/7/10.1063/1.2770963
2007-08-13
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Unipolarization of ambipolar organic field effect transistors toward high-impedance complementary metal-oxide-semiconductor circuits
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/7/10.1063/1.2770963
10.1063/1.2770963
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