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Double capping of molecular beam epitaxy grown quantum dots studied by cross-sectional scanning tunneling microscopy
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) Large scale filled states image of sample A showing the three QD layers in which CL1 is 1.5, 2.5, and thick in (a), (b), and (c), respectively. The growth direction is from right to left. and .

Image of FIG. 2.
FIG. 2.

Current image of a QD in sample B corresponding to layer 2 . Part of a second QD appears on the right and a shallow trench is clearly observed between the two QDs. , and .

Image of FIG. 3.
FIG. 3.

(Color online) Topography image of three QDs in sample C corresponding to (a) layer 1 , (b) layer 3 , and (c) layer 4 . CL1 appears as a dark region between the WL and CL2. The bright spots are As atoms in the matrix. and .

Image of FIG. 4.
FIG. 4.

(Color online) Average QD height in each layer as a function of the nominal thickness of CL1 for the three analyzed samples. The error is taken as the distance to the maximum and minimum values that were measured. The solid curve represents the ideal situation where the dot height corresponds exactly to the thickness of CL1. A significant deviation is observed for thick first capping layers.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Double capping of molecular beam epitaxy grown InAs∕InP quantum dots studied by cross-sectional scanning tunneling microscopy