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Stabilization of higher- tetragonal by admixture enabling thermally stable metal-insulator-metal capacitors
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10.1063/1.2771376
/content/aip/journal/apl/91/7/10.1063/1.2771376
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/7/10.1063/1.2771376
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Leakage current vs CET relation for MIM capacitors with slight variation in thermal budget. (b) X-ray diffraction spectra suggesting crystallization of as source of leakage current degradation.

Image of FIG. 2.
FIG. 2.

Area statistics of leakage current density for amorphous and monoclinic . Strong area dependence for crystalline suggests both an intrinsic and extrinsic (local defects) contribution.

Image of FIG. 3.
FIG. 3.

(a) Evolution of dielectric constant with annealing temperature for and . (b) X-ray diffraction indicates crystallization into the tetragonal phase for .

Image of FIG. 4.
FIG. 4.

(a) Statistics of leakage current density for amorphous and crystalline of the same thickness for areas and showing absence of local defects. (b) Leakage current vs CET relation for and MIM capacitors.

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/content/aip/journal/apl/91/7/10.1063/1.2771376
2007-08-14
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Stabilization of higher-κ tetragonal HfO2 by SiO2 admixture enabling thermally stable metal-insulator-metal capacitors
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/7/10.1063/1.2771376
10.1063/1.2771376
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