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(a) Atomic force microscopy image of the graphene layer used for the device fabrication, (b) Electrical conductance of the graphene device as a function of the applied gate bias, (c) Hall resistance of the graphene device as a function of the gate bias. Note that the value of the plateau confirms the relativistic band structure and selection of SLG.
Temperature dependence of the peak position for BLG and HOPG. The inset shows the shape of the peak and its shift for SLG.
Raman spectrum showing 2D peak frequency at 113 and for (a) SLG and (b) BLG.
Temperature coefficients for the and 2D peaks in the single-layer and bilayer graphene.
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