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Variable temperature Raman microscopy as a nanometrology tool for graphene layers and graphene-based devices
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10.1063/1.2771379
/content/aip/journal/apl/91/7/10.1063/1.2771379
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/7/10.1063/1.2771379

Figures

Image of FIG. 1.
FIG. 1.

(a) Atomic force microscopy image of the graphene layer used for the device fabrication, (b) Electrical conductance of the graphene device as a function of the applied gate bias, (c) Hall resistance of the graphene device as a function of the gate bias. Note that the value of the plateau confirms the relativistic band structure and selection of SLG.

Image of FIG. 2.
FIG. 2.

Temperature dependence of the peak position for BLG and HOPG. The inset shows the shape of the peak and its shift for SLG.

Image of FIG. 3.
FIG. 3.

Raman spectrum showing 2D peak frequency at 113 and for (a) SLG and (b) BLG.

Tables

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Table I.

Temperature coefficients for the and 2D peaks in the single-layer and bilayer graphene.

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/content/aip/journal/apl/91/7/10.1063/1.2771379
2007-08-15
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Variable temperature Raman microscopy as a nanometrology tool for graphene layers and graphene-based devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/7/10.1063/1.2771379
10.1063/1.2771379
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