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Effect of excess bismuth concentration on dielectric and electrical properties of fully crystallized thin films
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10.1063/1.2771381
/content/aip/journal/apl/91/7/10.1063/1.2771381
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/7/10.1063/1.2771381
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) X-ray diffraction patterns of BMN films deposited at with different excess bismuth concentrations and (b) the narrow scan of BMN peaks exhibiting at near for different excess bismuth concentrations.

Image of FIG. 2.
FIG. 2.

(a) X-ray diffraction patterns of BMN films with excess bismuth as a function of deposition temperature and (b) the narrow scan of BMN peaks exhibiting at near at various deposition temperatures.

Image of FIG. 3.
FIG. 3.

Variations in dielectric constant and dissipation factor as a function of excess bismuth amount in BMN films deposited at . The inset of Fig. 3 shows the variations in grain size as a function of excess Bi amount.

Image of FIG. 4.
FIG. 4.

(a) Relationship between leakage current density and applied electric field and (b) variations in rms roughness in films deposited at with different excess bismuth amounts.

Image of FIG. 5.
FIG. 5.

(a) vs plot of -thick BMN films deposited at and (b) log vs at the various applied voltages.

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/content/aip/journal/apl/91/7/10.1063/1.2771381
2007-08-15
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of excess bismuth concentration on dielectric and electrical properties of fully crystallized Bi2Mg2∕3Nb4∕3O7 thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/7/10.1063/1.2771381
10.1063/1.2771381
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