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(a) X-ray diffraction patterns of BMN films deposited at with different excess bismuth concentrations and (b) the narrow scan of BMN peaks exhibiting at near for different excess bismuth concentrations.
(a) X-ray diffraction patterns of BMN films with excess bismuth as a function of deposition temperature and (b) the narrow scan of BMN peaks exhibiting at near at various deposition temperatures.
Variations in dielectric constant and dissipation factor as a function of excess bismuth amount in BMN films deposited at . The inset of Fig. 3 shows the variations in grain size as a function of excess Bi amount.
(a) Relationship between leakage current density and applied electric field and (b) variations in rms roughness in films deposited at with different excess bismuth amounts.
(a) vs plot of -thick BMN films deposited at and (b) log vs at the various applied voltages.
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