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Photodetector with artificial atoms of silicon
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10.1063/1.2771527
/content/aip/journal/apl/91/7/10.1063/1.2771527
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/7/10.1063/1.2771527
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Scanning electron microscopy image of device top view and the schematic of a vertical triple quantum dots sandwiched device.

Image of FIG. 2.
FIG. 2.

(Color online) characteristics of the quantum dots of device 1 acquired in the dark (black line) and under of illumination (red line).

Image of FIG. 3.
FIG. 3.

(Color online) characteristics of the quantum dots of device 2 acquired in the dark and use the optical gate of controllable illumination intensities of 101.7, 125.4, 178.6, 290, 396, 498, and .

Image of FIG. 4.
FIG. 4.

(Color online) characteristics of the quantum dots acquired in the dark (black line) and use the optical gate at of illumination (red line). Reversible switching in curve measured every on/off under manually chopped illumination is also shown (green line).

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/content/aip/journal/apl/91/7/10.1063/1.2771527
2007-08-17
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photodetector with artificial atoms of silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/7/10.1063/1.2771527
10.1063/1.2771527
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