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Nonvolatile memory characteristics of nickel-silicon-nitride nanocrystal
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10.1063/1.2760144
/content/aip/journal/apl/91/8/10.1063/1.2760144
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/8/10.1063/1.2760144
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional high resolution transmission electron microscope (HRTEM) analysis of nitrogen incorporated film between the tunnel oxide and the blocking oxide. The nanocrystal size and density are about and , respectively. The inset shows the memory structure diagram.

Image of FIG. 2.
FIG. 2.

(a) Ni and (b) N x-ray photoelectron spectroscopy (XPS) analyses of the nanocrystals. Empty circles and straight line indicate experimental and fitting results, respectively.

Image of FIG. 3.
FIG. 3.

Capacitance-voltage hysteresis of the fabricated MOIOS structure with the NiSiN nanocrystals embedded in matrix as a charge trapping layer. The inset shows current density–voltage characteristics.

Image of FIG. 4.
FIG. 4.

Retention characteristics of the memory structure with NiSiN nanocrystals embedded in matrix using a gate voltage stress for at room temperature. The dotted line is the extrapolated value of retention data after .

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/content/aip/journal/apl/91/8/10.1063/1.2760144
2007-08-20
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nonvolatile memory characteristics of nickel-silicon-nitride nanocrystal
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/8/10.1063/1.2760144
10.1063/1.2760144
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