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Cross-sectional high resolution transmission electron microscope (HRTEM) analysis of nitrogen incorporated film between the tunnel oxide and the blocking oxide. The nanocrystal size and density are about and , respectively. The inset shows the memory structure diagram.
(a) Ni and (b) N x-ray photoelectron spectroscopy (XPS) analyses of the nanocrystals. Empty circles and straight line indicate experimental and fitting results, respectively.
Capacitance-voltage hysteresis of the fabricated MOIOS structure with the NiSiN nanocrystals embedded in matrix as a charge trapping layer. The inset shows current density–voltage characteristics.
Retention characteristics of the memory structure with NiSiN nanocrystals embedded in matrix using a gate voltage stress for at room temperature. The dotted line is the extrapolated value of retention data after .
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