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InGaAs single photon avalanche detector with ultralow excess noise
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10.1063/1.2772231
/content/aip/journal/apl/91/8/10.1063/1.2772231
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/8/10.1063/1.2772231
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic diagram of InGaAs–InAsAs SPAD layer structure. (b) Concept of operation for the InGaAs–InAlAs SPAD showing the self-quenching and self-recovery processes.

Image of FIG. 2.
FIG. 2.

(Color online) Current voltage characteristics of the InGaAs–InAlAs SPAD in the dark and under illumination.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Avalanche pulse rate vs bias in the dark and under illumination. It also shows that the multiplication gain remains constant from . (b) A typical avalanche pulse signal of the InGaAs–InAlAs SPAD. The pulse width is approximately .

Image of FIG. 4.
FIG. 4.

(a) Avalanche pulse height spectrum at with very narrow pulse height distribution. The standard deviation is with a mean pulse height of . (b) A series of avalanche pulses each triggered by a single pair of photoexcited or dark carriers.

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/content/aip/journal/apl/91/8/10.1063/1.2772231
2007-08-20
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: InGaAs single photon avalanche detector with ultralow excess noise
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/8/10.1063/1.2772231
10.1063/1.2772231
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