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(Color online) (a) Schematic diagram of InGaAs–InAsAs SPAD layer structure. (b) Concept of operation for the InGaAs–InAlAs SPAD showing the self-quenching and self-recovery processes.
(Color online) Current voltage characteristics of the InGaAs–InAlAs SPAD in the dark and under illumination.
(Color online) (a) Avalanche pulse rate vs bias in the dark and under illumination. It also shows that the multiplication gain remains constant from . (b) A typical avalanche pulse signal of the InGaAs–InAlAs SPAD. The pulse width is approximately .
(a) Avalanche pulse height spectrum at with very narrow pulse height distribution. The standard deviation is with a mean pulse height of . (b) A series of avalanche pulses each triggered by a single pair of photoexcited or dark carriers.
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