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PL spectra of as-grown (thick gray line) laser structures containing seven QD layers overgrown with of InP at (thin black line) and (thick black line) as compared to a sample annealed at for (thin broken line).
QD growth temperature dependence of PL wavelength shift after annealing of QD structures. The inset shows emission spectra of a QD structure grown at before and after annealing.
Room temperature device characteristics of emitting MOVPE grown InP cladded uncoated lasers with seven QD layers showing in the upper part (a) characteristics of a device under pulsed operation and (b) cw emission spectrum of a mounted device at a drive current of . In the lower part of the figure the device length dependence of (c) threshold current density and (d) inverse external quantum efficiency are shown. Corresponding data of similar QW lasers are given for comparison in (c).
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