1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Effect of metal organic vapor phase epitaxy growth conditions on emission wavelength stability of quantum dot lasers
Rent:
Rent this article for
USD
10.1063/1.2773971
/content/aip/journal/apl/91/8/10.1063/1.2773971
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/8/10.1063/1.2773971
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

PL spectra of as-grown (thick gray line) laser structures containing seven QD layers overgrown with of InP at (thin black line) and (thick black line) as compared to a sample annealed at for (thin broken line).

Image of FIG. 2.
FIG. 2.

QD growth temperature dependence of PL wavelength shift after annealing of QD structures. The inset shows emission spectra of a QD structure grown at before and after annealing.

Image of FIG. 3.
FIG. 3.

Room temperature device characteristics of emitting MOVPE grown InP cladded uncoated lasers with seven QD layers showing in the upper part (a) characteristics of a device under pulsed operation and (b) cw emission spectrum of a mounted device at a drive current of . In the lower part of the figure the device length dependence of (c) threshold current density and (d) inverse external quantum efficiency are shown. Corresponding data of similar QW lasers are given for comparison in (c).

Loading

Article metrics loading...

/content/aip/journal/apl/91/8/10.1063/1.2773971
2007-08-23
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of metal organic vapor phase epitaxy growth conditions on emission wavelength stability of 1.55μm quantum dot lasers
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/8/10.1063/1.2773971
10.1063/1.2773971
SEARCH_EXPAND_ITEM