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Direct real-time observation of catastrophic optical degradation in operating semiconductor lasers using scanning tunneling microscopy
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10.1063/1.2775049
/content/aip/journal/apl/91/8/10.1063/1.2775049
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/8/10.1063/1.2775049
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) STM images of the double quantum well device with an STM gap voltage and tunneling current of and with (a) a corresponding schematic. The current through the sample is (b) and (c) . (d) shows a trace of 15 averaged horizontal lines across the images above for (solid) and (dashed). Neither the images nor the line plots have been processed or smoothed.

Image of FIG. 2.
FIG. 2.

(Color online) STM images of the buried heterostructure laser with an STM gap voltage and tunneling current of and with (a) a corresponding schematic. The current through the sample is (b) (before modification) and (c) (during modification). (d) shows traces of 15 averaged horizontal lines across the scan for before modification (solid), during modification (dashed), and after modification (dotted). Neither the images nor the line plots have been processed or smoothed.

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/content/aip/journal/apl/91/8/10.1063/1.2775049
2007-08-24
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Direct real-time observation of catastrophic optical degradation in operating semiconductor lasers using scanning tunneling microscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/8/10.1063/1.2775049
10.1063/1.2775049
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