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Band gap energy (solid line) as well as optical intensities of the lasing mode (dashed line) and the pump mode (dotted line) within the active region as a function of the distance to the top surface of the epitaxial layer structure. The respective number of quantum wells (QWs) is indicated for each set of QWs.
Calculated longitudinal confinement factors (dashed lines), (dotted lines), and (solid lines) for (a) the pump resonance at an external angle of incidence of 50° and (b) the lasing resonance at .
Measured absorption around the pump resonance of the VECSEL structure without optical pumping, displayed as a contour plot as a function of wavelength and incidence angle. The isoabsorption lines are marked by the respective percentage of absorbed pump light.
Heat sink temperature-dependent cw power transfer characteristics of an in-well pumped VECSEL employing a SiC intracavity heat spreader (thick lines). The inset shows a lasing spectrum recorded at a heat sink temperature of and an absorbed pump power of . For comparison, the cw power transfer characteristic of a comparable barrier-pumped VECSEL recorded at a heat sink temperature of is also displayed (thin line).
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