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Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes
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10.1063/1.2775334
/content/aip/journal/apl/91/9/10.1063/1.2775334
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/9/10.1063/1.2775334
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Energy band lineups of (a) conventional type-I QW and (b) staggered QW.

Image of FIG. 2.
FIG. 2.

(Color online) Room temperature cathodoluminescence spectra of staggered QW and conventional type-I QW.

Image of FIG. 3.
FIG. 3.

(Color online) Room temperature photoluminescence spectra of staggered QW and conventional QW.

Image of FIG. 4.
FIG. 4.

(Color online) Relative light output power vs injected current for staggered QW LED and conventional QW LED.

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/content/aip/journal/apl/91/9/10.1063/1.2775334
2007-08-27
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/9/10.1063/1.2775334
10.1063/1.2775334
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