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(Color online) Atomic force micrographs of (a) a single layer of QDs grown on GaAs(100) (sample 1) and of (b) a 16.5 period multilayer of QDs grown on GaAs(100) (sample 2). (c) and (d) are corresponding GISAXS intensity patterns on a logarithmic color scale. The insets in (a) and (b) are fast Fourier transforms of the corresponding AFM image.
(Color online) GIXD patterns of a single layer of QDs grown on GaAs(100) (sample 1) in the vicinity of the (a) and (b) 022 reciprocal lattice point.
(Color online) Numerical finite element calculations of the total strain tensor components and in the vicinity of an elongated island grown on GaAs(100). The wetting layer thickness has been assumed as .
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