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Initial stages of chain formation in a single layer of (In,Ga)As quantum dots grown on GaAs (100)
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10.1063/1.2775801
/content/aip/journal/apl/91/9/10.1063/1.2775801
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/9/10.1063/1.2775801
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Atomic force micrographs of (a) a single layer of QDs grown on GaAs(100) (sample 1) and of (b) a 16.5 period multilayer of QDs grown on GaAs(100) (sample 2). (c) and (d) are corresponding GISAXS intensity patterns on a logarithmic color scale. The insets in (a) and (b) are fast Fourier transforms of the corresponding AFM image.

Image of FIG. 2.
FIG. 2.

(Color online) GIXD patterns of a single layer of QDs grown on GaAs(100) (sample 1) in the vicinity of the (a) and (b) 022 reciprocal lattice point.

Image of FIG. 3.
FIG. 3.

(Color online) Numerical finite element calculations of the total strain tensor components and in the vicinity of an elongated island grown on GaAs(100). The wetting layer thickness has been assumed as .

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/content/aip/journal/apl/91/9/10.1063/1.2775801
2007-08-28
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Initial stages of chain formation in a single layer of (In,Ga)As quantum dots grown on GaAs (100)
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/9/10.1063/1.2775801
10.1063/1.2775801
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