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Effect of gas pressure on current-voltage characteristics of amorphous carbon film/silicon heterojunction
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10.1063/1.2776017
/content/aip/journal/apl/91/9/10.1063/1.2776017
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/9/10.1063/1.2776017
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Raman spectra of the films/ deposited at various Ar pressures.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Current-voltage characteristics of the junction measured under different gas pressures. The inset shows the schematic illustration of the electrical measurement. The effect of gas pressure on the reverse bias characteristics of the junctions deposited at (b) , (c) , and (d) .

Image of FIG. 3.
FIG. 3.

(Color online) Relation between and of the junction for the (a) reverse bias voltages and (b) forward bias voltages under different gas pressures.

Image of FIG. 4.
FIG. 4.

(Color online) Sensitivity of junction vs gas pressure at various reverse bias voltages. The inset shows the resistance of the junction as a function of the gas pressure at various reverse bias voltages.

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/content/aip/journal/apl/91/9/10.1063/1.2776017
2007-08-27
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of gas pressure on current-voltage characteristics of amorphous carbon film/silicon heterojunction
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/9/10.1063/1.2776017
10.1063/1.2776017
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