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X-ray diffraction spectra of control sample.
SIMS depth profile for control sample prior to the etching back of the oxide.
Cross-sectional HRTEM image focusing on the interface between oxide and Ge layer for control sample.
Electrical characteristics of MOS capacitors for various gate dielectrics. (a) Leakage current comparison measured under accumulation. (b) Capacitance and hysteresis comparison.
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