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Passivation of type-II double heterostructure
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10.1063/1.2776353
/content/aip/journal/apl/91/9/10.1063/1.2776353
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/9/10.1063/1.2776353

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Sketch of the technique used to suppress the surface leakage in a double heterostructure. This figure represents the case when the contact region is inverted.

Image of FIG. 2.
FIG. 2.

(Color online) Quantum efficiency of control samples A-1 and B-1 at . The higher response of sample A-1 in the LWIR is due to the response from the two superlattice contacts.

Image of FIG. 3.
FIG. 3.

(Color online) Variation of the inverse of the in function of the perimeter over area ratio for samples B-1 (a), B-2 (b), B-3 (c), and B-4 (d). The measurements of the differential resistance were realized at . The red line is a linear fit of the data points.

Tables

Generic image for table
Table I.

Summary of surface resistivities and statistics.

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/content/aip/journal/apl/91/9/10.1063/1.2776353
2007-08-28
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Passivation of type-II InAs∕GaSb double heterostructure
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/9/10.1063/1.2776353
10.1063/1.2776353
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