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Defects around self-organized InAs quantum dots measured by slow positron beam
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10.1063/1.2776861
/content/aip/journal/apl/91/9/10.1063/1.2776861
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/9/10.1063/1.2776861
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Atomic force microscopy images of the uncapped 2.5 ML InAs QD on GaAs(001) substrate grown at .

Image of FIG. 2.
FIG. 2.

(Color online) Experimental variation of the line shape parameters as a function of positron incident energy for QD samples capped with only a GaAs layer. The inset is parameters in different layers of the sample.

Image of FIG. 3.
FIG. 3.

(Color online) Experimental variation of the line shape parameters as a function of positron incident energy for QD samples capped with a SRL and a GaAs layer. The inset is parameters in different layers of the sample.

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/content/aip/journal/apl/91/9/10.1063/1.2776861
2007-08-29
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Defects around self-organized InAs quantum dots measured by slow positron beam
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/9/10.1063/1.2776861
10.1063/1.2776861
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