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On-chip matching networks for radio-frequency single-electron transistors
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) (a) Idealized model of an matching network. (b) Optical micrograph of an on-chip matching network prior to wire bonding. The apparent inductor linewidth is set by the resolution of the image. The inset shows an electron micrograph of the SET.

Image of FIG. 2.
FIG. 2.

(Color online) (a) curves of sample A for various . The modulation at the DJQP and JQP features is about . Point M shows the dc bias for optimal rf-SET operation and the arrows and vertical dashed lines show the peak to peak rf amplitude at the SET . (b) False-color image of vs and . Experimentally determined optimal values of and for rf operation are indicated by the dashed lines.

Image of FIG. 3.
FIG. 3.

(Color online) (a) vs frequency for sample B for different as determined from lockin measurements of . Top to bottom: center of the gap (pink), (green), (black), (red), and (blue). The inset shows reflected power vs frequency for the low impedance SET and Panasonic chip inductor (left) and for sample B (right). Left inset, top to bottom: center of the gap (pink), (green), (black), (red), and (blue). Right inset, top to bottom: center of the gap (pink), (green), (black), (red), and (blue). (b) Power spectrum of the rf-SSET output for a rms excitation. The lower line is the noise floor with no rf signal applied on the SET. Inset: total system noise at vs the dc SET current in the absence of applied rf power.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: On-chip matching networks for radio-frequency single-electron transistors