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Electronic transport in resistive switch
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10.1063/1.2777170
/content/aip/journal/apl/91/9/10.1063/1.2777170
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/9/10.1063/1.2777170
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Switch structure and (b) current-voltage characteristics of switch with -thick sandwiched between Cu and Pt electrodes. Voltage is applied to Cu electrode. Insert: A schematic cross section of Cu metal precipitated in .

Image of FIG. 2.
FIG. 2.

Transmission electron microscope images of switch (a) before turning it on and (b) after turning it on. (c) Spectrum of energy dispersive x-ray spectrometer (EDX). EDX signals from points A and B in (b). Arrows in (c) show Cu-related signals.

Image of FIG. 3.
FIG. 3.

(a) Temperature dependence of on resistance . Curves A, B, and C correspond to of 30, 26, and at . Experimental data were fitted using Eq. (1). (b) Temperature coefficient of resistance (, where is residual resistance of at low temperatures). Dotted line shows the temperature coefficient for pure Cu. Data were normalized with resistance at .

Image of FIG. 4.
FIG. 4.

Ambient temperature dependence of characteristics in off state. Inset: Schematic view of switch. Conductive path consists of metallic islands separated by tunneling barriers (gaps).

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/content/aip/journal/apl/91/9/10.1063/1.2777170
2007-08-27
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electronic transport in Ta2O5 resistive switch
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/9/10.1063/1.2777170
10.1063/1.2777170
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