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Improving carrier transport and light emission in a silicon-nanocrystal based MOS light-emitting diode on silicon nanopillar array
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10.1063/1.2778352
/content/aip/journal/apl/91/9/10.1063/1.2778352
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/9/10.1063/1.2778352

Figures

Image of FIG. 1.
FIG. 1.

(a) Scanning electron microscopy (SEM) image of Ni nanodots precipitated from the evaporated Ni film on . (b) SEM image of Si nanopillars formed after inductively coupled-plasma reactive-ion etching with a rf/bias power recipe of . (c) Device structure of a silicon-nanocrystal based MOSLED on Si nanopillar array. (d) diode with a circular contact diameter of .

Image of FIG. 2.
FIG. 2.

Normalized PL spectra of nc-Si based MOSLEDs (a) without and (b) with Si nanopillars. Normalized EL spectra of nc-Si based MOSLEDs (c) with and (d) without Si nanopillars.

Image of FIG. 3.
FIG. 3.

and curves of nc-Si based MOSLEDs with/without Si nanopillars. Inset: EL picture of nc-Si based MOSLED with Si nanopillars.

Image of FIG. 4.
FIG. 4.

Fowler-Nordheim plots of tunneling data in MOS diodes with Si-rich on Si nanopillar substrate (solid), Si-rich film (dash), less Si-rich (dash-dot), and pure film (dash-dot-dot).

Tables

Generic image for table
Table I.

Comparison on the coefficients and , effective barrier height, and electron mass of MOSLEDs with a pure , a less Si-rich , a Si-rich on Si substrate, and a Si-rich on Si nanopillar array.

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/content/aip/journal/apl/91/9/10.1063/1.2778352
2007-08-29
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improving carrier transport and light emission in a silicon-nanocrystal based MOS light-emitting diode on silicon nanopillar array
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/9/10.1063/1.2778352
10.1063/1.2778352
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