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(a) Scanning electron microscopy (SEM) image of Ni nanodots precipitated from the evaporated Ni film on . (b) SEM image of Si nanopillars formed after inductively coupled-plasma reactive-ion etching with a rf/bias power recipe of . (c) Device structure of a silicon-nanocrystal based MOSLED on Si nanopillar array. (d) diode with a circular contact diameter of .
Normalized PL spectra of nc-Si based MOSLEDs (a) without and (b) with Si nanopillars. Normalized EL spectra of nc-Si based MOSLEDs (c) with and (d) without Si nanopillars.
and curves of nc-Si based MOSLEDs with/without Si nanopillars. Inset: EL picture of nc-Si based MOSLED with Si nanopillars.
Fowler-Nordheim plots of tunneling data in MOS diodes with Si-rich on Si nanopillar substrate (solid), Si-rich film (dash), less Si-rich (dash-dot), and pure film (dash-dot-dot).
Comparison on the coefficients and , effective barrier height, and electron mass of MOSLEDs with a pure , a less Si-rich , a Si-rich on Si substrate, and a Si-rich on Si nanopillar array.
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