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Copper-doped CdTe films with improved hole mobility
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10.1063/1.2778455
/content/aip/journal/apl/91/9/10.1063/1.2778455
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/9/10.1063/1.2778455
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Rutherford backscattering and particle-induced x-ray emission spectra for a CdTe:Cu film after annealing at for .

Image of FIG. 2.
FIG. 2.

XRD spectra of CdTe:Cu films grown on GaAs (100) substrate at with two different thicknesses. For comparison, the XRD data are normalized at (111) peak.

Image of FIG. 3.
FIG. 3.

PR spectra of two CdTe:Cu films of different thicknesses grown on GaAs(100) at .

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/content/aip/journal/apl/91/9/10.1063/1.2778455
2007-08-27
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Copper-doped CdTe films with improved hole mobility
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/9/10.1063/1.2778455
10.1063/1.2778455
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