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(Color online) (a) Diagram of the OFET device geometries for transistors T1–T4. [(b)–(e)] Transfer characteristics at for both forward and reverse gate bias scans with corresponding AFM height images of films (insets) for transistors T1–T4, respectively. (f) Output characteristics at for all four types of transistors.
Time-dependent decay of of OFETs for transistors T1–T4 with different buffer layers under continuous dc voltage biases of for .
Statistical analysis of the electrical characteristics: (a) mobility and (b) threshold voltage of 52 OFETs obtained from two substrates fabricated within the same batch.
Summary of the electrical parameters for transistors T1, T2, T3, and T4. rms, root-mean-square roughness (of the gate dielectrics), , capacitance density; , field-effect mobility; , threshold voltage; , turn-on voltage; , subthreshold slope, , on/off current ratio. T1: ; T2: ; T3: ; T4: .
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