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Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink
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10.1063/1.2778749
/content/aip/journal/apl/91/9/10.1063/1.2778749
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/9/10.1063/1.2778749
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Figures

Image of FIG. 1.
FIG. 1.

XTEM micrographs of Ge PAI B implanted SOI and bulk Si samples. (a) BF micrograph of an as-implanted SOI sample. [(b) and (c)] WB , XTEM micrographs of samples annealed at for in SOI and bulk Si, respectively.

Image of FIG. 2.
FIG. 2.

van der Pauw resistivity after isochronal annealings. Open stars, squares, triangles, crosses, and circles represent 8, 20, 24, 28, and Ge PAI in SOI, respectively. Inset are SIMS profiles of as implanted (solid line), Ge PAI in bulk Si (open squares), and SOI (closed circles) annealed at for .

Image of FIG. 3.
FIG. 3.

Dose of excess Si interstitials that flow toward the surface causing deactivation for various values of recombination length , plotted together with the deactivated B dose. The results are plotted as a function of the remaining crystal layer thickness after amorphization. The above quantities are represented by lines and symbols, respectively (error bars in some cases are smaller than symbol size).

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/content/aip/journal/apl/91/9/10.1063/1.2778749
2007-08-30
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/9/10.1063/1.2778749
10.1063/1.2778749
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