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In situ electrical impedance spectroscopy under high pressure on diamond anvil cell
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10.1063/1.2778760
/content/aip/journal/apl/91/9/10.1063/1.2778760
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/9/10.1063/1.2778760

Figures

Image of FIG. 1.
FIG. 1.

(a) Final configuration of the microcircuit on a diamond anvil. The Mo film exposed at the center is used as the probe and that at the edge is contacted with measurement instrument through copper leads. The alumina film protects the Mo probe and insulates from outer circumstance. (b) The profile chart of designed DAC.

Image of FIG. 2.
FIG. 2.

plots of CdS under high pressure and room temperature. Inset: the enlargement of the left arc.

Image of FIG. 3.
FIG. 3.

plots of CdS under high pressure. Inset: the enlargement of part A.

Image of FIG. 4.
FIG. 4.

Pressure dependence of and of CdS. The circle and star symbols correspond to resistance and relaxation frequency of the grain boundary, respectively.

Tables

Generic image for table
Table I.

Pressure dependence of activation energy in grain boundary.

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/content/aip/journal/apl/91/9/10.1063/1.2778760
2007-08-30
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In situ electrical impedance spectroscopy under high pressure on diamond anvil cell
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/9/10.1063/1.2778760
10.1063/1.2778760
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