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Study of selective amorphous silicon etching to silicon nitride using a pin-to-plate dielectric barrier discharge in atmospheric pressure
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10.1063/1.2779096
/content/aip/journal/apl/91/9/10.1063/1.2779096
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/9/10.1063/1.2779096
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic diagram of the atmospheric pressure plasma system used in this study (pin-to-plate DBD).

Image of FIG. 2.
FIG. 2.

Effect of the flow rate in the gas mixture on the etch rates of and and the etch selectivity of to .

Image of FIG. 3.
FIG. 3.

Effect of the flow rate in the gas mixture on the power consumption and the relative optical emission intensity of F measured by OES.

Image of FIG. 4.
FIG. 4.

(a) Effect of the flow rate in the gas mixture on the etch rates of and and the etch selectivity of to. (b) (I and II) C XPS spectra of the and after the etching with . (III and IV) C XPS spectra of the and after etching with .

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/content/aip/journal/apl/91/9/10.1063/1.2779096
2007-08-30
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Study of selective amorphous silicon etching to silicon nitride using a pin-to-plate dielectric barrier discharge in atmospheric pressure
http://aip.metastore.ingenta.com/content/aip/journal/apl/91/9/10.1063/1.2779096
10.1063/1.2779096
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