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Ambipolar transistor behavior in -doped InAs nanowires grown by molecular beam epitaxy
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10.1063/1.2821372
/content/aip/journal/apl/92/1/10.1063/1.2821372
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/1/10.1063/1.2821372
/content/aip/journal/apl/92/1/10.1063/1.2821372
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/content/aip/journal/apl/92/1/10.1063/1.2821372
2008-01-10
2014-09-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ambipolar transistor behavior in p-doped InAs nanowires grown by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/1/10.1063/1.2821372
10.1063/1.2821372
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