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Ambipolar transistor behavior in -doped InAs nanowires grown by molecular beam epitaxy
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10.1063/1.2821372
/content/aip/journal/apl/92/1/10.1063/1.2821372
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/1/10.1063/1.2821372
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

characteristics as a function of gate voltage for a Be doped InAs nanowire at (a) , (b) , and (c) .

Image of FIG. 2.
FIG. 2.

Transfer characteristics showing ambipolar conduction of a Be doped InAs nanowire biased with at . Sweep rates and directions are indicated in the figure. The transconductances for determining the mobilities are found at gate voltages above/below .

Image of FIG. 3.
FIG. 3.

Transfer characteristics showing ambipolar conduction of a Be doped InAs nanowire with a bias of at , 150, and . The open circles are taken by sweeping the gate voltage from and the solid circles from .

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/content/aip/journal/apl/92/1/10.1063/1.2821372
2008-01-10
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ambipolar transistor behavior in p-doped InAs nanowires grown by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/1/10.1063/1.2821372
10.1063/1.2821372
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