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Change in band alignment of films with annealing treatments
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10.1063/1.2826270
/content/aip/journal/apl/92/1/10.1063/1.2826270
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/1/10.1063/1.2826270
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XPS spectra (a) Si , (b) Hf , and (c) N , as a function of various annealing conditions.

Image of FIG. 2.
FIG. 2.

Reflection electron energy loss spectra (REELS) with different electron gun energies; (a) . Band gap using (b) spectroscopic ellipsometry is well consistent with the REELS data.

Image of FIG. 3.
FIG. 3.

Valence band spectra for the films (left side) and a band alignment diagram with Si (right side) as a function of various postannealing treatment.

Image of FIG. 4.
FIG. 4.

MEIS spectra for a change in concentration in the depth direction as a function of postannealing treatment.

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/content/aip/journal/apl/92/1/10.1063/1.2826270
2008-01-11
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Change in band alignment of HfO2 films with annealing treatments
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/1/10.1063/1.2826270
10.1063/1.2826270
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