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Etching of nanopatterns in silicon using nanopantography
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10.1063/1.2828208
/content/aip/journal/apl/92/1/10.1063/1.2828208
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/1/10.1063/1.2828208
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic of nanopantography apparatus. (b) Expanded view of motorized stage.

Image of FIG. 2.
FIG. 2.

Ion energy distribution of an beam extracted from the inductively coupled pulsed plasma. The voltage pulse on the acceleration ring electrode was from in the afterglow. pressure, modulation frequency, 50% duty cycle, and average plasma power.

Image of FIG. 3.
FIG. 3.

Etching of nanotrenches by nanopantography: (a) top view of a portion of a diam lens array, (b) 45° view of a portion of a cleaved diam lens array, and (c) 45° view of an etched trench in a diam lens.

Image of FIG. 4.
FIG. 4.

Etching of T-shaped features by nanopantography: (a) top view of a portion of a diam lens array and (b) 45° view of a portion of a diam lens array.

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/content/aip/journal/apl/92/1/10.1063/1.2828208
2008-01-09
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Etching of nanopatterns in silicon using nanopantography
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/1/10.1063/1.2828208
10.1063/1.2828208
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