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Self-assembled deoxyguanosine based molecular electronic device on GaN substrates
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/content/aip/journal/apl/92/1/10.1063/1.2828405
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Image of FIG. 1.

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FIG. 1.

Nanoscale UV photodetector integrated on a semiconductor chip. (a) Larger gold pads. (b) Magnified image of electrodes with gate or gap.

Image of FIG. 2.

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FIG. 2.

Current-voltage characteristics of a two-terminal nanoscale device based on semiconductor deoxyguanosine deposited in between Au electrodes on GaN substrates. Inset is the schematic of UV-visible photodetector based on modified deoxyguanosine on GaN substrates.

Image of FIG. 3.

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FIG. 3.

Photocurrent spectrum of SAGC based photodiode exhibiting semiconducting behavior.

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/content/aip/journal/apl/92/1/10.1063/1.2828405
2008-01-11
2014-04-24

Abstract

Nanoscale hybrid molecular organic photodetectors based on self-assembled guanosine molecules conjugated to wide-bandgap GaNsemiconductors has been realized in the ultraviolet wavelength regime. Metal-semiconductor-metal based photodetector is fabricated using ordering of modified guanosine based semiconductor nanowires which exhibit characteristics with high current response and higher rectification ratio compared to Si based hybrid photodetectors. Photocurrent response of a two-terminal device shows the typical characteristics of a semiconductorphotodiode with a cutoff wavelength at . The characteristics have been elucidated using the induced polarization properties of self-assembled guanosine semiconductor.

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Scitation: Self-assembled deoxyguanosine based molecular electronic device on GaN substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/1/10.1063/1.2828405
10.1063/1.2828405
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