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All-optical delay line using semiconductor cavity solitons
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10.1063/1.2828458
/content/aip/journal/apl/92/1/10.1063/1.2828458
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/1/10.1063/1.2828458
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Experimental set-up. vertical cavity surface emitting laser (VCSEL). cylindrical lens (CL). Electro-optic modulator (EOM). tunable master laser (ML). Inset: Transverse profile emission (negative image) of a section VCSEL, in the regime of CS existence under injection by a broad holding beam. Four CS are present.

Image of FIG. 2.
FIG. 2.

Passage of a cavity soliton in front of a linear array of five detectors (A–E). Left panel: time traces of these detectors, displaced vertically by for clarity. Detector A monitors the point addressed by the writing beam, applied at time . Right panel: positions of the detectors in the transverse plane (indicated by squares). The area monitored by each detector has a diameter of less than and the separation between neighboring detectors is . Also shown is a time-averaged output image of the VCSEL during the CS drift (charge coupled device camera exposure time of about ).

Image of FIG. 3.
FIG. 3.

(a) Drift speed vs phase gradient (wavevector tilt of holding beam) for and two cavity detuning values. Here, . (b) Log-log plot of CS drift speed vs for a fixed detuning and for two values of the gradient: (stars) ; (diamonds) . Here, .

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/content/aip/journal/apl/92/1/10.1063/1.2828458
2008-01-02
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: All-optical delay line using semiconductor cavity solitons
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/1/10.1063/1.2828458
10.1063/1.2828458
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