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Epitaxial thin films on Si(001) substrates grown by pulsed laser deposition for high- gate dielectrics
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10.1063/1.2828692
/content/aip/journal/apl/92/1/10.1063/1.2828692
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/1/10.1063/1.2828692
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Figures

Image of FIG. 1.
FIG. 1.

(a) scan XRD spectra of -thick LHO films grown on Si(001) at 700 and , respectively. (b) scan of the epitaxial LHO film around the surface normal of the asymmetric reflection. The zero of the scan is set along the orientation.

Image of FIG. 2.
FIG. 2.

(a) Cross-sectional HRTEM micrograph showing LHO dielectric grown directly on a clean Si surface at . The digital FFT patterns of the LHO layer and Si substrate are shown in (b) and (c), respectively.

Image of FIG. 3.
FIG. 3.

(a) High-frequency capacitance-voltage and (b) current-voltage characteristics of a -type MIS capacitor with LHO gate dielectrics. Capacitors were circular in diameter.

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/content/aip/journal/apl/92/1/10.1063/1.2828692
2008-01-02
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxial La2Hf2O7 thin films on Si(001) substrates grown by pulsed laser deposition for high-k gate dielectrics
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/1/10.1063/1.2828692
10.1063/1.2828692
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