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NBTI kinetics of Hf stacks. The threshold voltage shift, , was measured from the shift of quasi-dc transfer characteristics.
A comparison of the power factor of the NBTI kinetics for Hf stacks with that for . The power factor extracted from the total given in Fig. 1 (symbol “○”) is substantially less than that of . The symbol “◼” is the power factor for obtained by using Eq. (1). The result for was taken from Ref. 4. was extracted by fitting Eq. (2).
The flat-then-rise feature of NBTI kinetics for Hf stacks. The total is flat within and only starts “rise” at longer time. The symbols “◻” and “◇” were measured by using pulsed and quasi-dc , respectively. The (symbol “●”) represents the rising part of and was obtained by using Eq. (1). The stress was at room temperature.
(a) Impact of temperature on NBTI kinetics of Hf stacks. The contrasting dependence on temperature indicates that different defects are responsible for the flat and rising part of . (b) A comparison of cyclic positive charging (CPC) in fresh SiON and . Although the CPC is negligible for a fresh SiON, it is considerable in a fresh .
NBTI kinetics of a Hf silicate. The flat-then-rise feature is the same as that for . The open and closed symbols were obtained from pulsed and quasi-dc , respectively.
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