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Band bending and the thermochemistry of oxygen vacancies in ionic metal oxide thin films
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10.1063/1.2828703
/content/aip/journal/apl/92/1/10.1063/1.2828703
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/1/10.1063/1.2828703
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic showing expected band bending in the due to a metal electrode where the metal Fermi level lies below the donor level corresponding to the oxygen vacancy. Figures on the left and right represent scenarios before and after contact with the metal.

Image of FIG. 2.
FIG. 2.

Voltage drop expected across the dielectric thin film as a function of oxygen partial pressure due to the formation of positively charged oxygen vacancy defects at and assuming that . Here, is the standard free energy change for vacancy formation and is the energy difference between the metal Fermi level and the oxygen level at the metal interface. The solid line is for the case where the charged vacancy concentration is uniform across the film, and the dashed curve is for the case where the concentration is allowed to vary. The experimental data points (squares and circles at 673 and annealings, respectively) are from Ref. 5.

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/content/aip/journal/apl/92/1/10.1063/1.2828703
2008-01-03
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Band bending and the thermochemistry of oxygen vacancies in ionic metal oxide thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/1/10.1063/1.2828703
10.1063/1.2828703
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