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Reducing the contact resistance of bottom-contact pentacene thin-film transistors by employing a carrier injection layer
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/content/aip/journal/apl/92/1/10.1063/1.2828711
2008-01-02
2014-08-01

Abstract

We report on the reduced contact resistance in bottom-contact (BC) pentacene thin-film transistors(TFTs) with a molybdenum oxide carrier injection layer. layers were placed between the gate insulator and the source-drain (S-D) electrodes instead of the conventional adhesive layer such as Cr or Ti. The performance of the BC pentacene-TFT with the injection layer was significantly improved at low operating voltages. The contact resistance of the S-D electrodes, estimated using the gated-transmission line method, was nearly two orders of magnitude smaller than that of conventional electrodes at the gate voltage of . The highest performance was obtained with a injection layer a few nanometers thick, which was comparable to the effective channel thickness of the pentacene-TFT on the gate insulator. This result indicated the importance of the direct connection between the injection layer and the effective channel to reduce the contact resistance.

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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reducing the contact resistance of bottom-contact pentacene thin-film transistors by employing a MoOx carrier injection layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/1/10.1063/1.2828711
10.1063/1.2828711
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