1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Combinatorial study of zinc tin oxide thin-film transistors
Rent:
Rent this article for
USD
10.1063/1.2828862
/content/aip/journal/apl/92/1/10.1063/1.2828862
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/1/10.1063/1.2828862
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Atomic fraction of ZnO and as a function of position on the wafers.

Image of FIG. 2.
FIG. 2.

A saturation transfer curve demonstrating the method used to find carrier mobility, threshold voltage and subthreshold slope. The device in this figure has a composition of .

Image of FIG. 3.
FIG. 3.

Mobility as a function of zinc oxide fraction across an entire wafer of devices. Note that the line serves as a guide to the eye only.

Image of FIG. 4.
FIG. 4.

Threshold voltage and on/off ratio as a function of zinc oxide fraction across an entire wafer of devices. The sudden decrease in both threshold voltage and on/off ratio is due to the light sensitivity of these devices.

Loading

Article metrics loading...

/content/aip/journal/apl/92/1/10.1063/1.2828862
2008-01-02
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Combinatorial study of zinc tin oxide thin-film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/1/10.1063/1.2828862
10.1063/1.2828862
SEARCH_EXPAND_ITEM