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Typical current-voltage characteristics of programing (solid circles) and erasing (empty circles) of MIM resistive memory; inset shows the cross-sectional view of the MIM memory integrated in CMOS architecture.
Measured erasing yield of single voltage pulse as a function of pulse amplitude (diamond dots) with a parabolic fitting (line); inset shows the erasing ratio as a function of pulse amplitude.
Measured erasing yield as a function of select transistor for pulse width of , 1 and . Inset shows the dependence of erasing on pulse width.
Major erasing parameters vs programing , (a) on-resistance and peak erasing current and (b) erasing voltage and peak erasing power.
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