1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Erasing characteristics of metal-insulator-metal resistive switching memory
Rent:
Rent this article for
USD
10.1063/1.2828864
/content/aip/journal/apl/92/1/10.1063/1.2828864
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/1/10.1063/1.2828864
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Typical current-voltage characteristics of programing (solid circles) and erasing (empty circles) of MIM resistive memory; inset shows the cross-sectional view of the MIM memory integrated in CMOS architecture.

Image of FIG. 2.
FIG. 2.

Measured erasing yield of single voltage pulse as a function of pulse amplitude (diamond dots) with a parabolic fitting (line); inset shows the erasing ratio as a function of pulse amplitude.

Image of FIG. 3.
FIG. 3.

Measured erasing yield as a function of select transistor for pulse width of , 1 and . Inset shows the dependence of erasing on pulse width.

Image of FIG. 4.
FIG. 4.

Major erasing parameters vs programing , (a) on-resistance and peak erasing current and (b) erasing voltage and peak erasing power.

Loading

Article metrics loading...

/content/aip/journal/apl/92/1/10.1063/1.2828864
2008-01-02
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Erasing characteristics of Cu2O metal-insulator-metal resistive switching memory
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/1/10.1063/1.2828864
10.1063/1.2828864
SEARCH_EXPAND_ITEM