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Type-II InGaN-GaNAs quantum wells for lasers applications
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10.1063/1.2829600
/content/aip/journal/apl/92/1/10.1063/1.2829600
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/1/10.1063/1.2829600
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Energy band lineup of (a) type-I QW and (b) type-II QW. Both structures are designed for . Note the improvement in the wavefunction overlap in the type-II QW structure.

Image of FIG. 2.
FIG. 2.

(a) Spontaneous emission spectra and (b) optical gain type-I QW and type-II QW emitting at for increasing carrier density .

Image of FIG. 3.
FIG. 3.

Peak material gain as a function of carrier density for type-I QW and type-II QW at room temperature.

Image of FIG. 4.
FIG. 4.

Peak material gain as a function of current density per QW for type-I QW and type-II QW at room temperature.

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/content/aip/journal/apl/92/1/10.1063/1.2829600
2008-01-02
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Type-II InGaN-GaNAs quantum wells for lasers applications
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/1/10.1063/1.2829600
10.1063/1.2829600
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