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Epitaxial growth of doped thin films on Si(001) substrates for high- application
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10.1063/1.2829792
/content/aip/journal/apl/92/1/10.1063/1.2829792
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/1/10.1063/1.2829792
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

In situ RHEED patterns of (a) and (b) structures.

Image of FIG. 2.
FIG. 2.

XRD scans for epitaxial grown (black line) and (red line). The inset shows the (111) peak positions of the two samples. The vertical arrows in the inset indicate the expected (111) peak locations after the detector angle correction by the Si(004) peak.

Image of FIG. 3.
FIG. 3.

Cross-section TEM image taken along the zone axis. (a) Low magnification, bright field TEM image of the heterostructure. (b) HRTEM image of the interface. (c), (d), and (e) are the corresponding FFT patterns taken from the HDC layer, , and Si substrate, respectively.

Image of FIG. 4.
FIG. 4.

High-frequency curves of a MOS capacitor with thick HDC layer. The inset upper left shows curves for HDC film (black line) and film (red line) with the same crystal orientation and thickness. The inset lower right shows a series of curves for HDC films with different thickness at .

Image of FIG. 5.
FIG. 5.

Gate leakage current density for MOS capacitors with thick HDC layer (black line) and layer (red line). The inset shows the curves comparison for HDC films with different thickness.

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/content/aip/journal/apl/92/1/10.1063/1.2829792
2008-01-07
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxial growth of HfO2 doped CeO2 thin films on Si(001) substrates for high-κ application
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/1/10.1063/1.2829792
10.1063/1.2829792
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