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In situ RHEED patterns of (a) and (b) structures.
XRD scans for epitaxial grown (black line) and (red line). The inset shows the (111) peak positions of the two samples. The vertical arrows in the inset indicate the expected (111) peak locations after the detector angle correction by the Si(004) peak.
Cross-section TEM image taken along the zone axis. (a) Low magnification, bright field TEM image of the heterostructure. (b) HRTEM image of the interface. (c), (d), and (e) are the corresponding FFT patterns taken from the HDC layer, , and Si substrate, respectively.
High-frequency curves of a MOS capacitor with thick HDC layer. The inset upper left shows curves for HDC film (black line) and film (red line) with the same crystal orientation and thickness. The inset lower right shows a series of curves for HDC films with different thickness at .
Gate leakage current density for MOS capacitors with thick HDC layer (black line) and layer (red line). The inset shows the curves comparison for HDC films with different thickness.
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