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TEM image of film. (a) Cross-sectional image of a programed -PRAM cell. (b) Cross-sectional image of thin film of on layer.
Comparison of PRAM cell device characteristics with and without . The resistance changes of PRAM cells with (solid square) and without (open square) the layer after applying an electrical pulse for . The axis shows the current of the pulse.
Reduction of programing current with increasing thickness. The RESET current, SET resistance, and nominal heating power for PRAM cells with varying thickness and for two types of BEC materials. The lines are guides for the eyes.
Measured thermal conductance per unit area of several configurations of thin films. The measured thermal conductance is the series sum of the thermal conductance of the interfaces and the thermal conductance of the and -GST thin films in the structure. Solid circles, ; open circles, ; solid triangles, ; and open triangles, . The thickness of the -GST films is . The dashed line is a fit to the data (open circles) used to separate the series thermal conductance of the and interfaces from the thermal conductivity of the film: and . The higher conductances observed for the thinnest thin films may be due to inhomogeneities in the thickness of the film that allow direct contact between the Al transducer and the TiN or TiAlN BEC.
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