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Hysteresis loops at of MnAs thin films grown at 160, 200, 240, and (the magnetic field is applied in plane). In the inset, dependence of the critical temperatures [ (open circles) and (closed circles)] and the magnetization at (open triangles) with the growth temperature.
Reciprocal space mapping along the growth direction of MnAs thin films intercepting GaAs(111) and MnAs(002) for samples grown at (a) and (b) . At , an extra MnAs(101) orientation is observed.
(a) Reciprocal space mapping around the (101) reflection of a MnAs thin film grown at . Two extra reflections can be observed indicating unambiguously that the phase is orthorhombic. The calculated reflections are displayed for , for the -phase, and , , and for the phase. (b) Evolution of the -phase fraction with the growth temperature deduced from the integrated intensity of (101) and the corresponding (111)(102) doublet (open circles). In the inset, an example of decomposition is shown for the sample grown at . The magnetization fraction (open triangles) matches very well the -phase fraction at room temperature.
(a) Reciprocal space mapping around the (106) reflection of MnAs and the one of GaAs for a sample grown at . (b) Dependence of the lattice parameters of the hexagonal MnAs deduced from the reciprocal space mappings around the (106) and (002) reflections.
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