No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Hydrostatic pressure effects on poly(3-hexylthiophene) thin film transistors
13.Z. Rang, A. Haraldsson, D. M. Kim, P. P. Ruden, M. I. Nathan, R. J. Chesterfield, and C. D. Frisbie, Appl. Phys. Lett. 79, 2731 (2001).
14.Z. Rang, M. I. Nathan, P. P. Ruden, V. Podzorov, M. E. Gershenson, C. R. Newman, and C. D. Frisbie, Appl. Phys. Lett. 86, 123501 (2005).
Article metrics loading...
Poly(3-hexylthiophene) thin-film transistors are subjected to hydrostaticpressure up to . The charge carrier mobility and threshold voltage are extracted from curves. These parameters change linearly with pressure and retrace upon gradual pressure release. The mobility increases from , and the threshold voltage falls from over the full pressure range. As a result, the current rises with increasing pressure up to and then falls as pressure is increased further. The increase in the mobility is attributed to enhanced -orbital overlap under compression. The change in threshold voltage is interpreted as a modulation of trapped charge density.
Full text loading...
Most read this month