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(a) GIRAS spectra of thin PVDF films spin cast on Au substrate and rapidly annealed at various temperatures for . The intensity of each spectrum was rescaled for clarity. (b) The fraction of crystals in the PVDF films calculated by the relative intensity of the characteristic peaks at corresponding temperature.
(a) 2D GIXD pattern and (b) AFM image of a thick PVDF film spin cast and rapidly annealed at on bare Au substrate. The inset of (b) displays a magnified image with the characteristic needlelike crystals. (c) AFM images of a PVDF film spin cast and rapidly annealed on COOH-terminated SAMs treated Au substrate. AFM (d) and OM image [the inset of (d)] show micropatterned and PVDF crystals.
(a) Polarization vs applied voltage hysteresis loops of (a) thick PVDF film rapidly annealed at after spin casting. (b) transfer curve of pentacene OTFT with bilayered PVDF–PVP gate dielectric. The drain voltage , channel length , and width are , , and , respectively. The arrows indicate hysteresis direction. The inset depicts the FeFET device structure. (c) The ratio of crystals at various temperatures to ones at room temperature measured by in situ GIRAS upon heating.
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