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Evidence of hot electrons generated from an high electron mobility transistor
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10.1063/1.2830834
/content/aip/journal/apl/92/1/10.1063/1.2830834
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/1/10.1063/1.2830834
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Photoluminescence spectra measured on an -based HEMT structure at an excitation wavelength of for three different DC electric fields. Arrows mark two transition peaks under the zero electric field.

Image of FIG. 2.
FIG. 2.

Electron temperature (filled dots) and lattice temperature (open circles) under different electric fields, deduced from PL spectra (see Fig. 1).

Image of FIG. 3.
FIG. 3.

Electron temperature vs electric field: data (filled dots)—deduced from the PL spectra (see Fig. 1); fitted values (open circles)—after fitting data using Eq. (4).

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/content/aip/journal/apl/92/1/10.1063/1.2830834
2008-01-11
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Evidence of hot electrons generated from an AlN∕GaN high electron mobility transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/1/10.1063/1.2830834
10.1063/1.2830834
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