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Electric field distribution in heterostructures with two-dimensional electron and hole gas
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10.1063/1.2830836
/content/aip/journal/apl/92/1/10.1063/1.2830836
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/1/10.1063/1.2830836
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

AlGaN ER spectra of sample A in dependence of the externally applied dc voltage. (a) ER spectrum at , (b) color-coded voltage map of the ER spectra, and (c) ER spectrum at .

Image of FIG. 2.
FIG. 2.

GaN ER spectra of sample A in dependence of the externally applied dc voltage. (a) ER spectrum at , (b) color-coded voltage map of the ER spectra, and (c) ER spectrum at .

Image of FIG. 3.
FIG. 3.

Electric field strength of GaN cap layers and AlGaN barriers of sample A (circles, red lines), sample B (triangles, blue lines), and sample C (rectangles, green lines) vs externally applied dc voltage. The arrows indicate the voltage range for the existence of 2DEG and 2DHG.

Image of FIG. 4.
FIG. 4.

Sheet electron and hole concentration of sample A (solid line), B (dotted line), and C (dashed line) in dependence of the externally applied voltage.

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/content/aip/journal/apl/92/1/10.1063/1.2830836
2008-01-08
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electric field distribution in GaN∕AlGaN∕GaN heterostructures with two-dimensional electron and hole gas
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/1/10.1063/1.2830836
10.1063/1.2830836
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