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Enhanced dielectric properties in single crystal-like thin films grown by flux-mediated epitaxy
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Schematic of the deposition procedure for temperature gradient and composition spread experiment. The composition spread consisted of and CuO . (b) XRD map of spread showing the intensity of the BFO (001) peak as a function of substrate temperature and CuO flux composition (thickness). (c) XRD map in the region marked I in (b) for 0% CuO. (d) XRD map for the region with CuO [labeled II in (b)] with the highest intensity of the BFO (001) peak. The shaded region in (d) shows an enlargement of the growth window of BFO compared to that for films deposited without CuO (c).

Image of FIG. 2.
FIG. 2.

Atomic force microscopy images taken from areas of BFO thin films grown by (a) conventional PLD and (b) FME method. (c) three-dimensional enhanced image of part of (b) showing atomic steps during growth of the film with grain size of . The inset in (c) is a line scan showing an average step height of .

Image of FIG. 3.
FIG. 3.

(a) Cross-sectional bright field TEM image showing smooth surface of the BFO film which was grown by FME on SRO buffered (001) oriented STO. thick palladium (Pd) was used as top electrode. High resolution lattice images of (b) interface between STO and SRO and (c) interface between SRO and BFO showing epitaxial growth with sharp interfaces. The insets in (b) and (c) are the corresponding diffraction patterns.

Image of FIG. 4.
FIG. 4.

(a) Dielectric constant of BFO thin films fabricated by standard PLD method on STO (100) and (111), and by FME method on STO (100) as a function of frequency. (b) Leakage current density vs electric field curves of BFO thin films fabricated by standard PLD and FME method.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhanced dielectric properties in single crystal-like BiFeO3 thin films grown by flux-mediated epitaxy