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(a) Cross-sectional TEM images of MOS structure with NCs and (b) plan-view TEM image of the NCs on a Si wafer.
XPS spectra of the NCs on Si(100) at room temperature: (a) the Co region for the thin film, (b) the Co region for the NPs, (c) the Si region for the thin film, and (d) the Si region for the NCs.
(a) Typical capacitance-voltage curves of MOS structures containing the NPs and (b) characteristics of the MOS capacitor with NCs for voltage levels of .
(a) Retention characteristics of MOS device with NCs. Data retention time is obtained by electron charging (, ) or hole charging (, ) once and monitoring the capacitance at zero gate bias and room temperature; (b) cycling endurance characteristics of the same device for (, ).
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