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Behavior of stress induced leakage current in thin films
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View: Figures


Image of FIG. 1.
FIG. 1.

Behaviors of SILC created under (a) negative and (b) positive CVSs with various stress times. The inset in (a) is the SILC before and after negative CVS, though the stress time spreads to , there is no obvious SILC occuring due to the small stress voltage and its negative polarity.

Image of FIG. 2.
FIG. 2.

Behavior of SILC under different positive CVSs. No threshold voltage was observed, but emerges to be a critical voltage from the increase trend of SILC.

Image of FIG. 3.
FIG. 3.

Relative increase of SILC a function of the injected electrons measured at various thicknesses. At lower injection, SILC is weaker thickness dependent, while at higher injection, SILC is stronger thickness dependent. The solid line denotes the increase trend of SILC. The dotted line implies the saturation of SILC increase. The inset shows the threshold injected charge for this saturation as a function of temperature for film.

Image of FIG. 4.
FIG. 4.

Recovery of SILC after detrapping at (a) and (b) .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Behavior of stress induced leakage current in thin HfOxNy films